| 发明名称 |
OPTICAL SEMICONDUCTOR DEVICE HAVING AN EPITAXIAL LAYER OF III-V COMPOUND SEMICONDUCTOR MATERIAL CONTAINING N AS A GROUP V ELEMENT |
| 摘要 |
An optical semiconductor device includes an SiC substrate having an n-type conductivity, and an AlGaN buffer layer having an n-type conductivity formed on the SiC substrate with a composition represented as AlxGa1-xN, wherein the AlGaN buffer layer has a carrier density in the range between 3x1018-1x1012cm-3, and the compositional parameter x is larger than 0 but smaller than 0.4 (0<x<0.4).
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| 申请公布号 |
US2002110945(A1) |
申请公布日期 |
2002.08.15 |
| 申请号 |
US19990313764 |
申请日期 |
1999.05.18 |
| 申请人 |
FUJITSU LIMITED OF KAWASAKI, JAPAN |
发明人 |
KURAMATA AKITO;KUBOTA SHINICHI;HORINO KAZUHIKO;SOEJIMA REIKO |
| 分类号 |
H01L21/205;B82Y10/00;B82Y20/00;B82Y40/00;H01L21/20;H01S5/00;H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/205 |
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