发明名称 |
Method of forming an oxinitride layer |
摘要 |
In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reaction chamber from the first temperature to a second temperature under a second pressure. Additionally, the oxide layer is nitrified in the reaction chamber to form the oxynitride layer on the substrate. When the oxide layer and/or the oxynitride layer are formed on the substrate, minute patterns of a semiconductor device, for example a DRAM device, an SRAM device or an LOGIC device may be easily formed on the oxide layer or the oxynitride layer.
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申请公布号 |
US2008090424(A1) |
申请公布日期 |
2008.04.17 |
申请号 |
US20070973042 |
申请日期 |
2007.10.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOU YOUNG-SUB;LEAM HUN-HYEOUNG;NAM SEOK-WOO;KIM BONG-HYUN;LEE WOONG;LEE SANG-HOON |
分类号 |
H01L21/31;H01L21/469;H01L21/316 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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