| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition capable of improving the performance in minute processing of a semiconductor element using an electron beam, an X ray, a KrF excimer laser beam, or an ArF excimer laser beam, excellent in terms of sensitivity, resolution, focal margin (DOF) performance, LWR, reduction of blur, and reduction of pattern surface roughness; and to provide a pattern-forming method using the same.SOLUTION: The active light or radiation-sensitive composition includes (A) a resin having a hydroxy styrene unit, an alkoxyalkyl group-substituted hydroxy styrene unit not including a cycloalkyl group, an alkoxyalkyl group-substituted hydroxy styrene unit including a cycloalkyl group or a (meth)alkyl acrylate ester unit, (B) a compound for generating an acid by radiation of an active light or radiation, and (C) a solvent including an ethyl lactate. Also provided is a pattern-forming method using the same. |
