发明名称 |
Method and apparatus for growing high purity single crystal silicon carbide |
摘要 |
Method and apparatus for growing semiconductor grade silicon carbide boules (84). Pure silicon feedstock (36) is melted and vaporized. The vaporized silicon is reacted with a high purity carbon-containing gas (64), such as propane, and the gaseous species resulting from the reaction are deposited on a silicon carbide seed crystal (50), resulting in the growth of monocrystalline silicon carbide.
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申请公布号 |
US5985024(A) |
申请公布日期 |
1999.11.16 |
申请号 |
US19970987572 |
申请日期 |
1997.12.11 |
申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
BALAKRISHNA, VIJAY;THOMAS, R. NOEL;AUGUSTINE, GODFREY;HOPKINS, RICHARD H.;HOBGOOD, H. MCDONALD |
分类号 |
C30B29/36;C30B23/00;C30B23/02;(IPC1-7):C30B23/00 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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