摘要 |
<p>This invention provides a process for producing a nitride semiconductor, comprising the step of regulating the temperature and pressure within an autoclave containing a seed having a crystal structure of a hexagonal system, a nitrogen element-containing solvent, a starting material comprising a metallic element belonging to group 13 of the periodic table, and a mineralizer so that the solvent is brought to a supercritical state and/or a subcritical state to allow a nitride semiconductor crystal to grow ammonothermally on the surface of the seed, wherein the crystal growth rate in m-axis direction on the seed is brought to not less than 1.5 times the crystal growth rate in c-axis direction on the seed. The above constitution can realize the production of nitride semiconductors with a large-diameter c face and nitride semiconductors having a large thickness in m-axis direction in an efficient and simple manner.</p> |
申请人 |
MITSUBISHI CHEMICAL CORPORATION;TOHOKU UNIVERSITY;KAWABATA, SHINICHIRO;ITOH, HIROHISA;EHRENTRAUT, DIRK;KAGAMITANI, YUJI;YOSHIKAWA, AKIRA;FUKUDA, TSUGUO |
发明人 |
KAWABATA, SHINICHIRO;ITOH, HIROHISA;EHRENTRAUT, DIRK;KAGAMITANI, YUJI;YOSHIKAWA, AKIRA;FUKUDA, TSUGUO |