Power Conversion Device

摘要

A power conversion device includes: a metal housing; a power semiconductor module that is contained in the metal housing and converts direct electric current to alternating electric current; a capacitor module that is contained in the metal housing and arranged side by side with the power semiconductor module, wherein the capacitor module smoothes the direct electric current supplied to the power semiconductor module; a substrate that has a drive circuit part mounted in a first region, the drive circuit part driving the power semiconductor module, and a control circuit part mounted in a second region, the control circuit part controlling the drive circuit part, wherein the substrate is disposed so as to cover over the metal housing; a base plate that extends in a space in which the second region of the substrate and the capacitor module oppose to each other, and that is electrically connected to the metal housing; and a first noise shielding member that extends in a direction along a boundary between the first region and the second region of the substrate, wherein the first noise shielding member separates the space from a space of the housing in which the power semiconductor module is disposed, and the first noise shielding member is electrically connected to the metal housing or a ground of the control circuit part.

主权项

1. A power conversion device, comprising:
a metal housing; a power semiconductor module that is contained in the metal housing and converts direct electric current to alternating electric current; a capacitor module that is contained in the metal housing and arranged side by side with the power semiconductor module, wherein the capacitor module smoothes the direct electric current supplied to the power semiconductor module; a substrate that has a drive circuit part mounted in a first region, the drive circuit part driving the power semiconductor module, and a control circuit part mounted in a second region, the control circuit part controlling the drive circuit part, wherein the substrate is disposed so as to cover over the metal housing; a base plate that extends in a space in which the second region of the substrate and the capacitor module oppose to each other, and that is electrically connected to the metal housing; and a first noise shielding member that extends in a direction along a boundary between the first region and the second region of the substrate, wherein the first noise shielding member separates the space from a space of the housing in which the power semiconductor module is disposed, and the first noise shielding member is electrically connected to the metal housing or a ground of the control circuit part.