3D nonvolatile memory device

摘要

A 3D nonvolatile memory device is disclosed. The 3D nonvolatile memory device includes a word line stack in which a plurality of word lines are stacked therein and includes a cell region and a slimming region, and pass transistors located below the word line stack, and electrically coupled to the slimming region. A width of the slimming region is larger than that of the cell region.

主权项

1. A three-dimensional (3D) nonvolatile memory device comprising:
a first word line stack including a plurality of first word lines and extending from a first cell region to a first slimming region; and a second word line stack including a plurality of second word lines and extending from a second cell region to a second slimming region, wherein each of the first slimming region and the second slimming region are in a stepped form, and wherein the first slimming region and the second slimming region face each other.