发明名称 |
FORMATION OF BORIDE BARRIER LAYERS USING CHEMISORPTION TECHNIQUES |
摘要 |
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate. |
申请公布号 |
WO0201628(A2) |
申请公布日期 |
2002.01.03 |
申请号 |
WO2001US20310 |
申请日期 |
2001.06.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BYUN, JEONG, SOO;MAK, ALFRED, W. |
分类号 |
C23C16/38;C23C16/44;C23C16/455;H01L21/285;H01L21/768 |
主分类号 |
C23C16/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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