TRANSISTOR HAVING RECESS CHANNEL STRUCTURE AND FIN STRUCTURE, SEMICONDUCTOR ELEMENT EMPLOYING THE TRANSISTOR, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a transistor having a recess channel structure and a fin structure, to provide a semiconductor element employing the transistor, and to provide a method of manufacturing the semiconductor element.

SOLUTION: The method forms an element isolation layer defining an active region in a semiconductor substrate. An upper gate trench crossing the active region is formed. A lower gate trench having a smaller width than that of the upper gate trench is formed to overlap the upper gate trench at both ends so that the lower gate trench can be spaced apart from sidewalls of the upper gate trench by partially etching the bottom of the upper gate trench. The isolation layer adjacent to the lower gate trench is partially etched to expose sidewalls of the active region adjacent to the bottom and sidewalls of the lower gate trench. A gate pattern is formed which fills the lower gate trench, covers the sidewall of the active region adjacent to the bottom and sidewall of the exposed lower gate trench, and partially covers the bottom of the upper gate trench so that the gate pattern can be spaced apart from the sidewall of the upper gate trench.

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