d durch dieses Verfahren wärmebehandelte SOI-Scheibe

摘要

A method for heat-treating an SOI wafer in a reducing atmosphere, characterized in that the SOI wafer is heat-treated through use of a rapid thermal annealer at a temperature within the range of 1100 DEG C to 1300 DEG C for 1 sec to 60 sec. The reducing atmosphere is preferably an atmosphere of 100% hydrogen or a mixed gas atmosphere containing hydrogen and argon. The heat treatment is preferably performed for 1 sec to 30 sec. The method eliminates COPs in an SOI layer of an SOI wafer in accordance with a hydrogen annealing method, while preventing etching of the SOI layer and a buried oxide layer.