Nonvolatile semiconductor memory device and method of manufacturing the same

摘要

According to one embodiment, a memory device includes a first stacked layer structure stacked in order of a first insulating layer, a first electrode layer, . . . an n-th insulating layer, an n-th electrode layer, and an (n+1)-th insulating layer in a first direction perpendicular to a surface of a semiconductor substrate, where n is a natural number, an oxide semiconductor layer extending through the first to n-th electrode layers in the first direction, a second stacked layer structure provided between the first to n-th electrode layers and the oxide semiconductor layer, and including a charge storage layer which storages charges, and a area provided in the oxide semiconductor layer.

主权项

1. A nonvolatile semiconductor memory device comprising: a first stacked layer structure stacked in order of a first insulating layer, a first electrode layer, an n-th insulating layer, an n-th electrode layer, and an (n+1)-th insulating layer in a first direction, where n is a natural number; an oxide semiconductor layer extending through the first to n-th electrode layers in the first direction; a second stacked layer structure provided between the first to n-th electrode layers and the oxide semiconductor layer, and including a charge storage layer which storages charges; and an area provided in the oxide semiconductor layer, being in contact with at least one of the first to (n+1)-th insulating layers, having a composition ratio of oxygen lower than a composition ratio of oxygen in the oxide semiconductor layer.