| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask blank in which sufficient process accuracy and low dependence of pattern density can be obtained in an etching process, further, a phase shift film or a transparent substrate disposed below a light shielding film may be hardly damaged upon removing the light shielding film, and similar process accuracy can be obtained to that of a conventional one using a chromium-based light shielding film, and to provide a photomask produced by patterning the photomask blank. <P>SOLUTION: The photomask blank comprises: an etching stopper layer composed of a monolayer or multilayer which has durability against fluorine-based dry etching and is removable by chlorine-containing dry etching, formed directly on a transparent substrate or with other layers interposed; a light shielding film composed of a monolayer comprising a material containing a transition metal and silicon or of a multilayer including one or more layers made of a material containing a transition metal and silicon, layered in contact with the etching stopper film; and an antireflection film composed of a monolayer or multilayer, laminated in contact with the light shielding film. <P>COPYRIGHT: (C)2007,JPO&INPIT |
