发明名称 DIMPLELESS GaAs WAFER STICKING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To solve the problems that a wax layer is thick, a film thickness is not uniform and recesses and salient parts are formed on a polished wafer when solid wax is rubbed to a polishing plate by a hand and a GaAs wafer is stuck with the hand, and the surface of the polished wafer is rugged due to the presence of foreign matters and air bubbles since the wax layer is thin when the normal liquid wax of low viscosity is spin-coated on a wafer back surface and stuck to the polishing plate. <P>SOLUTION: The liquid wax and the solid wax are heated, mixed and dissolved to prevent a solid portion from precipitating even if returned to a normal temperature, viscosity is turned to 10 cP to 60 cP at normal temperature, and the wax mixture is spin-coated on the GaAs wafer. The wax is stuck to the polishing plate, the thickness of the wax layer is turned to about 9 &mu;m to 30 &mu;m, and one surface of the wafer is polished. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007243082(A) 申请公布日期 2007.09.20
申请号 JP20060066928 申请日期 2006.03.13
申请人 SUMITOMO ELECTRIC IND LTD 发明人 OKAMOTO TAKATOSHI
分类号 H01L21/304;B24B37/30 主分类号 H01L21/304
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