| 摘要 |
PROBLEM TO BE SOLVED: To make a phenomenal improvement in throughput by making silicide formation reaction to happen easily only in a process for forming a titanium nitride film. SOLUTION: A method of forming a metal film has a process to form the titanium nitride film on a wafer by generating plasma while supplying titanium compound gas, reducing gas and nitrogen gas on the wafer. In this process, nitrogen gas is supplied so that the rate of supply flow may gradually increase from the start of supply until the nitrogen gas reaches a predetermined rate of supply flow (time duration Ts). As a result of the foregoing nitrogen gas supply, the titanium nitride film is formed on the wafer, while a titanium silicide film is formed on a surface containing silicon simultaneously. COPYRIGHT: (C)2009,JPO&INPIT
|
