METHOD OF MANUFACTURING LIGHT EMITTING DIODE EMPLOYING LASER LIFT-OFF TECHNOLOGY, AND LASER LIFT-OFF DEVICE HAVING HEATER

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a light emitting diode using a laser lift-off technology.

SOLUTION: The method of manufacturing the light emitting diode using the laser lift-off technology includes processes to grow a first conduction type compound semiconductor layer, an epi-layer provided with an active layer and a second conduction type compound semiconductor layer on a first substrate, to bond a second substrate having a thermal expansion coefficient different from the thermal expansion coefficient of the first substrate on the epi-layer at a first temperature where the temperature of the first substrate is higher than the room temperature, to irradiate a laser beam through the first substrate at the second temperature where the temperature of the first substrate is higher than the room temperature and is lower than or equal to the first temperature to separate the first substrate from the epi-layer. Thereby, it is easy to adjust the focus of laser beam in the laser lift-off process and the cracks of the epi-layer can be prevented. Moreover, a laser lift-off device having a heater is disclosed.

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