| 发明名称 | Device having reduced pad peeling during tensile stress testing and a method of forming thereof | ||
| 摘要 | The present disclosure relates to a method for forming a semiconductor device. The method includes forming a first aluminum pad layer on a metal layer, forming an adhesion layer on the first aluminum pad layer, etching the adhesion layer so as to form a patterned adhesion layer, and forming a second aluminum pad layer on the first aluminum pad layer and the patterned adhesion layer. | ||
| 申请公布号 | US9396993(B2) | 申请公布日期 | 2016.07.19 |
| 申请号 | US201414256241 | 申请日期 | 2014.04.18 |
| 申请人 | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION | 发明人 | Wang Xinpeng;Zhang Chenglong;Huang Ruixuan |
| 分类号 | H01L21/768;H01L23/00 | 主分类号 | H01L21/768 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A method for forming a semiconductor device, comprising: forming a first aluminum pad layer on a metal layer; forming an adhesion layer on the first aluminum pad layer; etching the adhesion layer so as to form a patterned adhesion layer; forming a second aluminum pad layer on the first aluminum pad layer and the patterned adhesion layer; and reducing a width of the first aluminum pad layer after a plurality of spaced portions of the patterned adhesion layer has been formed, wherein the first aluminum pad layer is wider than the patterned adhesion layer after the reducing. | ||
| 地址 | CN | ||