Cu-Co-Si-based copper alloy for electronic materials, and method of manufacturing same

摘要

Disclosed is a Cu—Co—Si-based copper alloy for electronic materials, which is capable of achieving high levels of strength, electrical conductivity, and also anti-setting property; and contains 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities; wherein out of second phase particles precipitated in the matrix a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×1012 to 1×1014 particles/mm3, and a ratio of the number density of particles having particle size of 5 nm or larger and smaller than 10 nm relative to the number density of particles having particle size of 10 nm or larger and 50 nm or smaller is 3 to 6.

主权项

1. A copper alloy for electronic materials which consists of 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, optionally a maximum of 2.5% by mass of Ni, optionally a maximum of 0.5% by mass of Cr, optionally a maximum of 2.0% by mass in total of one or more selected from the group consisting of Mg, P, As, Sb, Be, B, Mn, Sn, Zr, Al, Fe, Zn and Ag, and the balance of Cu and inevitable impurities wherein out of second phase particles precipitated in the matrix of the alloy a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×1012 to 1×1014 particles/mm3, and a ratio of the number density of particles having particle size of 5 nm or larger and smaller than 10 nm relative to the number density of particles having particle size of 10 nm or larger and 50 nm or smaller is 3 to 6.