| 摘要 |
PROBLEM TO BE SOLVED: To achieve an external resonator type variable wavelength laser using a wavelength bandpass filter having residual transmission or reflection to some extent, or a variable wavelength reflection structure. SOLUTION: The external resonator type variable wavelength laser incorporates a semiconductor gain region having a productΓL of an optical confinement constantΓand semiconductor gain region length L where the absolute valueΔLoss (dB) between loss at a wavelengthλ1 in the reflection structure and loss at a wavelengthλ2 becomes larger than a differenceΔg (dB) between a gain at the wavelengthλ1 in the semiconductor gain region and a gain at a wavelengthλ2 in laser oscillation, when the reflection spectrum peak wavelength of the reflection structure is the arbitrary wavelengthλ1 included in the variable wavelength range of the variable wavelength laser and is the wavelengthλ2 indicating the maximum gain in the semiconductor gain region in laser oscillation. COPYRIGHT: (C)2009,JPO&INPIT
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