发明名称 Spin-valve type magnetoresistive thin film element and its manufacturing method
摘要 The pinned magnetic layer 2 is composed of a track width region 2' and a dead region 2'', the track width region 2' being formed at a spaced apart relation to the bias region 5. Accordingly, magnetization of the track width region 2' is not so strongly affected by the bias region 5, thereby magnetization is fixed along the Y-direction at almost entire region of the track width region 2'. Therefore, the track width region 2' and the free magnetic region are in a crossing relation with each other giving a proper asymmetry in the entire region of the track width region 2'.
申请公布号 US6150045(A) 申请公布日期 2000.11.21
申请号 US19980153923 申请日期 1998.09.16
申请人 ALPS ELECTRIC CO., LTD. 发明人 SAITO, MASAMICHI;KURIYAMA, TOSHIHIRO
分类号 G11B5/39;H01F10/30;H01F10/32;H01F41/30;H01F41/32;H01L43/08;(IPC1-7):G11B5/66 主分类号 G11B5/39
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