IN SITU GROWTH OF OXIDE AND SILICON LAYERS,申请号KR1020007007545-传众专利搜索

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发明名称	IN SITU GROWTH OF OXIDE AND SILICON LAYERS
摘要
申请公布号	KR20010033960(A)	申请公布日期	2001.04.25
申请号	KR1020007007545	申请日期	2000.07.07
申请人		发明人
分类号	C30B25/02	主分类号	C30B25/02
代理机构		代理人
主权项
地址

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