NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting diode with excellent appearance and a wire bonding property, capable of forming an ohmic contact even at an ordinary temperature without any special heat treatment process by forming a B metal and an N metal in double layers of Ta/Au, and to provide a method of manufacturing the nitride semiconductor light emitting diode.

SOLUTION: This invention provides the nitride semiconductor light emitting diode, comprising: a substrate 11 for growing up a gallium nitride system semiconductor material; an n-type nitride semiconductor layer 12 formed on the substrate 11; an active layer 13 formed on the n-type nitride semiconductor layer 12 so that at least a partial region on the n-type nitride semiconductor layer 12 may be exposed; a p-type nitride semiconductor layer 14 formed on the active layer 13; a transparent electrode layer 15 formed on the p-type nitride semiconductor layer 14 in order to establish the ohmic contact; a P side bonding pad formed on the transparent electrode layer 15 in double layers of Ta/Au; and an n side electrode formed on the exposed partial region of the n-type nitride semiconductor layer 12 in the double layers of Ta/Au.

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