Photoelectric conversion device manufacturing method, photoelectric conversion device, and imaging system

摘要

A method comprises preparing a semiconductor substrate having a first portion, and a second portion including a first region and a second region; forming an active region in the first portion, and an isolating portion of an insulator defining the active region in the second portion; forming a first semiconductor region of a first conductivity type configuring a first photoelectric conversion element, a second semiconductor region of first conductivity type configuring a second photoelectric conversion element, a third semiconductor region of first conductivity type, a fourth semiconductor region of the conductivity type, a first gate electrode configuring a first transfer transistor, and a second gate electrode configuring a second transfer; exposing the first region of the semiconductor substrate, and performing ion implantation masked by a first photoresist pattern covering the second region of the semiconductor substrate, thus forming a fifth semiconductor region of a second conductivity type.

主权项

1. A photoelectric conversion device manufacturing method, comprising:
forming in a second portion of a semiconductor substrate, an isolating portion formed of an insulator, including a first region and a second region, and defining an active region in a first portion of the semiconductor substrate; forming,
a first semiconductor region of a first conductivity type, which is positioned in the active region, and constitutes a first photoelectric conversion element,a second semiconductor region of the first conductivity type, which is positioned in the active region, and constitutes a second photoelectric conversion element,a third semiconductor region of the first conductivity type, which is positioned in the active region,a fourth semiconductor region of the first conductivity type, which is positioned in the active region,a first gate electrode, on a region between the first semiconductor region and the third semiconductor region, the first gate electrode extending so as to overlap the first region, and the first gate electrode configuring a first transfer transistor conjointly with the first semiconductor region and the third semiconductor region, anda second gate electrode, on a region between the second semiconductor region and the fourth semiconductor region, the second gate electrode extending so as to overlap the first region, and the second gate electrode configuring a second transfer transistor conjointly with the second semiconductor region and the fourth semiconductor region; and forming a fifth semiconductor region at least beneath the second region of the isolating portion by performing ion implantation using a first photoresist pattern covering the first region of the semiconductor substrate as a mask.