| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate bipolar transistor capable of achieving reduction of reverse leakage current and maintenance of high yield rate, in good balance.SOLUTION: An insulated gate bipolar transistor includes a plurality of second conductivity type stripe base regions 2a-2d provided selectively on the upper surface of a first conductivity type drift region 11, first conductivity type emitter regions 3a, 3a, 3b,...,3dprovided selectively in the base regions 2a-2d, respectively, gate electrodes 5a-5e provided on the surface of the base regions 2a-2d from the emitter regions 3a, 3a, 3b,...,3dto the ends of the base regions 2a-2d, respectively, a second conductivity type collector region 10 provided on the lower surface of the drift region 1, and a plurality of lifetime control regions 30a-30d provided on the side of the collector region 10 in the drift region 1, corresponding to the arrangement of the plurality of base regions 2a-2d.SELECTED DRAWING: Figure 1 |
