发明名称 |
Secure memory which reduces degradation of data |
摘要 |
A method for managing a non-volatile memory may include a first phase of writing data to a first bank of a memory plane of the non-volatile memory, and then a second phase of writing the same data to a second bank of the same memory plane of the non-volatile memory in the case of success of the first writing phase. |
申请公布号 |
US9390801(B2) |
申请公布日期 |
2016.07.12 |
申请号 |
US201414584165 |
申请日期 |
2014.12.29 |
申请人 |
STMICROELECTRONICS (ROUSSET) SAS |
发明人 |
Tailliet Francois |
分类号 |
G11C16/04;G11C16/10;G06F11/20;G11C29/00;G06F11/16;G11C16/26;G11C16/34 |
主分类号 |
G11C16/04 |
代理机构 |
Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. |
代理人 |
Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. |
主权项 |
1. A method for operating a non-volatile memory comprising a memory plane having first and second banks of non-volatile memory cells for storing redundant data, the method comprising:
entering a secure writing mode based upon a write opcode; performing a first phase of writing the redundant data to the first bank of the memory plane after entering the secure writing mode; and if the first phase of writing the redundant data is successful, performing a second phase of writing the redundant data to the second bank of the memory plane. |
地址 |
Rousset FR |