发明名称 Secure memory which reduces degradation of data
摘要 A method for managing a non-volatile memory may include a first phase of writing data to a first bank of a memory plane of the non-volatile memory, and then a second phase of writing the same data to a second bank of the same memory plane of the non-volatile memory in the case of success of the first writing phase.
申请公布号 US9390801(B2) 申请公布日期 2016.07.12
申请号 US201414584165 申请日期 2014.12.29
申请人 STMICROELECTRONICS (ROUSSET) SAS 发明人 Tailliet Francois
分类号 G11C16/04;G11C16/10;G06F11/20;G11C29/00;G06F11/16;G11C16/26;G11C16/34 主分类号 G11C16/04
代理机构 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. 代理人 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
主权项 1. A method for operating a non-volatile memory comprising a memory plane having first and second banks of non-volatile memory cells for storing redundant data, the method comprising: entering a secure writing mode based upon a write opcode; performing a first phase of writing the redundant data to the first bank of the memory plane after entering the secure writing mode; and if the first phase of writing the redundant data is successful, performing a second phase of writing the redundant data to the second bank of the memory plane.
地址 Rousset FR