发明名称 Semiconductor device and method of fabricating the same
摘要 There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.
申请公布号 US9395584(B2) 申请公布日期 2016.07.19
申请号 US201414163207 申请日期 2014.01.24
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Hirakata Yoshiharu;Goto Yuugo;Kobayashi Yuko;Yamazaki Shunpei
分类号 H01L27/14;G02F1/1339;H01L29/786;G02F1/1333;H01L27/12;G02F1/1345 主分类号 H01L27/14
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A liquid crystal display device comprising: a first substrate in which a gate electrode, an insulating layer over the gate electrode, a semiconductor layer over the insulating layer, a source or drain electrode over the semiconductor layer, and an interlayer insulating layer over the source or drain electrode are formed; a second substrate in which a spacer including a resin material is formed, the second substrate opposed to the first substrate, wherein the spacer is a single layer; and a liquid crystal layer interposed between the first substrate and the second substrate, wherein the spacer includes a region overlapping with the gate electrode, the insulating layer, the semiconductor layer, the source or drain electrode, and the interlayer insulating layer, wherein the spacer has a cross-section in which a width of a second substrate side end portion of the spacer is larger than a width of a center portion of the spacer, the width of the center portion of the spacer is larger than a width of a first substrate side end portion of the spacer, and a value obtained by dividing the width of the second substrate side end portion of the spacer by the width of the center portion of the spacer is smaller than or equal to 3, and wherein in the spacer, an angle between a tangent plane at the center portion and a surface of the second substrate is larger than an angle between a tangent plane at the second substrate side end portion and the surface of the second substrate.
地址 Kanagawa-ken JP