| 摘要 |
Improved block exposure techniques for a semiconductor wafer that use a block mask with an exposure pattern separated into blocks are disclosed. Each block comprises a plurality of block elements having parts of the exposure pattern and installed on the block mask. A plurality of block elements having predetermined patterns are extracted from the exposure pattern. Each of the predetermined patterns is present in at least one partial area of an associated one of the block elements. A combination of a plurality of extracted block elements having patterns arrangeable in a single block is specified based on pattern present areas of the individual extracted block elements. The patterns of combined extracted block elements are laid out in a single block and an irradiation mode of that block is changed from a full irradiation mode to a partial irradiation mode.
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