发明名称 |
LATERAL POWER DEVICES WITH SELF-BIASING ELECTRODES |
摘要 |
<p>A semiconductor power transistor includes a drift region of a first conductivity type and a well region of a second conductivity type in the drift region such that the well region and the drift region form a pn junction therebetween. A first highly doped silicon region of the first conductivity type is in the well region, and a second highly doped silicon region is in the drift region. The second highly doped silicon region is laterally spaced from the well region such that upon biasing the transistor in a conducting state, a current flows laterally between first and second highly doped silicon regions through the drift region. Each of a plurality of trenches extending into the drift region perpendicular to the current flow includes a dielectric layer lining at least a portion of the trench sidewalls and at least one conductive electrode.</p> |
申请公布号 |
WO2007098317(A2) |
申请公布日期 |
2007.08.30 |
申请号 |
WO2007US61718 |
申请日期 |
2007.02.06 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION;KOCON, CHRISTOPHER, BOGUSLAW |
发明人 |
KOCON, CHRISTOPHER, BOGUSLAW |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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