发明名称 |
Manufacturing method of semiconductor device |
摘要 |
A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor. |
申请公布号 |
US9425088(B2) |
申请公布日期 |
2016.08.23 |
申请号 |
US201313862381 |
申请日期 |
2013.04.13 |
申请人 |
SOCIONEXT INC. |
发明人 |
Ihara Takumi;Ueno Seiji;Fujimori Joji;Fujimoto Yasunori |
分类号 |
H01L21/00;H01L21/768;H01L23/552;H01L25/16;H01L23/36;H01L23/367;H01L23/42;H01L25/065 |
主分类号 |
H01L21/00 |
代理机构 |
Westerman, Hattori, Daniels & Adrian, LLP |
代理人 |
Westerman, Hattori, Daniels & Adrian, LLP |
主权项 |
1. A manufacturing method of a semiconductor device, comprising:
putting a chip capacitor, that includes a first terminal electrode and a second terminal electrode, on a substrate; putting a semiconductor element on the substrate so that a first surface of the semiconductor element faces the substrate; disposing a conductive material on a second surface of the substrate that is opposite to the first surface so that the conductive material is directly connected to the first terminal electrode; and disposing a heat radiation plate on the conductive material, wherein the heat radiation plate includes an inhibiting portion that inhibits the conductive material from being brought into contact with the second terminal electrode. |
地址 |
Yokohama JP |