Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

摘要

The present disclosure suppresses oxidation of a base film on a substrate surface during the formation of an oxide film. A method of manufacturing a semiconductor device according to the present disclosure includes forming an initial layer including a predetermined element and having a thickness of several atomic layers on a substrate in a process chamber by supplying a predetermined-element-containing gas to the substrate, and forming an oxide film including the predetermined element on the initial layer by performing a cycle a predetermined number of times, the cycle including supplying a precursor gas including the predetermined element to the substrate in the process chamber and supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in the process chamber under a pressure lower than an atmospheric pressure.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming an initial layer including a predetermined element and having a thickness greater than or equal to two atomic layers and less than or equal to six atomic layers on a substrate in a process chamber by supplying a predetermined-element-containing gas to the substrate; and forming an oxide film including the predetermined element on the initial layer by performing a cycle a predetermined number of times, the cycle comprising supplying a precursor gas including the predetermined element to the substrate in the process chamber and supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in the process chamber under a pressure lower than an atmospheric pressure, wherein the initial layer serves as a layer for preventing oxidation of a surface of the substrate during the forming of the oxide film.