Semiconductor device and method for fabricating the same

摘要

Provided is a semiconductor device. Two stack layers are disposed on a substrate of a first conductivity type. Each of stack layers includes a dielectric layer and a conductive layer. The dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. First doped region of a second conductivity type has a first dopant and is disposed in the substrate between the stack layers. A pre-amorphization implantation (PAI) region is disposed in the first doped region. A second doped region of the second conductivity type has a second dopant and is disposed in the PAI region. The first conductivity type is different from the second conductivity type. A diffusion rate of the second dopant is faster than a diffusion rate of the first dopant, and a thermal activation of the second dopant is higher than that of the first dopant.

主权项

1. A semiconductor device, comprising:
two stack layers disposed on a substrate of a first conductivity type, wherein each of the stack layers comprises: a dielectric layer disposed on the substrate; and a conductive layer disposed on the dielectric layer; a first doped region of a second conductivity type, the first doped region comprising a first dopant therein and being disposed in the substrate between the stack layers; a pre-amorphization implantation (PAI) region disposed in the first doped region, wherein the PAI region is completely inside of the first doped region; and a second doped region of the second conductivity type, the second doped region comprising a second dopant therein and being disposed in the PAI region, wherein the second doped region is completely inside of the PAI region, the first conductivity type is different from the second conductivity type, a diffusion rate of the second dopant is faster than a diffusion rate of the first dopant, and a thermal activation of the second dopant is higher than a thermal activation of the first dopant.