X-Y address type solid state image pickup device and method of producing the same

摘要

In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

主权项

1. An image sensor comprising:
a light-shielding film that is impenetrable to light, an opening portion is a hole that extends through the light-shielding film; a floating diffusion at a first surface side of a semiconductor layer, a light-receiving surface side of the semiconductor layer is between the light-shielding film and the first surface side; a transfer transistor gate electrode in a wiring layer, the first surface side is between the wiring layer and the light-receiving surface side; and a photo-electric conversion device in the semiconductor layer, the transfer transistor gate electrode is between the floating diffusion and the photo-electric conversion device in a plan view of the image sensor.