| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has improved diode recovery characteristics and in which an IGBT and a diode are formed in one semiconductor substrate.SOLUTION: A semiconductor device (RC-IGBT301) comprises: an IGBT including an emitter layer on a first principal surface side of a semiconductor substrate and a collector layer on a second principal surface side of the semiconductor substrate; a reflux diode including an anode layer 310 on the first principal surface side of the semiconductor substrate and a cathode layer on the second principal surface side of the semiconductor substrate; a well region 304 provided in the boundary between the IGBT and the reflux diode and for separating the IGBT and the reflux diode; a first electrode formed on a first principal surface of the semiconductor substrate so as to connect to the emitter layer, the anode layer, and the well region 304; a resistor 351 provided between the well region 304 and the first electrode; and a second electrode formed on a second principal surface of the semiconductor substrate so as to connect to the collector layer and the cathode layer.SELECTED DRAWING: Figure 1 |
