发明名称 RESIN SEAL TYPE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent the remaining of voids in a resin by residual air in the periphery of a chip by a resin flowing difference between the central section and peripheral section of the chip in the case of the resin seal of a resin seal type semiconductor device. <P>SOLUTION: The semiconductor device has a die pad 1 for loading a semiconductor element, hanging leads 2 supporting the die pad 1, a plurality of leads 4 arrayed around the die pad, the semiconductor element 3 loaded on the die pad, metallic small-gage wires 5 connecting an electrode for the semiconductor element and the leads and a sealing resin 6 sealing the connecting regions of the metallic small-gage wires. The thickness of at least a part of the peripheral section of the sealing resin is made thinner than the central section, on which the semiconductor element is loaded. The resin seal type semiconductor device, in which there is no void in the sealing resin in the vicinity of the die pad, by thinning the thickness of the resin in the peripheral section of the chip and equalizing the speed of a flowing-in of the resin in the peripheral section of the chip and the central section of the chip. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005209699(A) 申请公布日期 2005.08.04
申请号 JP20040011845 申请日期 2004.01.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OKI SHIGERU;NANO MASANORI
分类号 H01L23/29;H01L23/31;(IPC1-7):H01L23/29 主分类号 H01L23/29
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