发明名称 |
CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus capable of reducing deterioration of a measurement accuracy of a stage position.SOLUTION: A charged particle beam lithography apparatus comprises: a drawing chamber 2a that has a bottom plate 51b including a bending part 51b2 that bends toward an external part and a plurality of supporting parts 51b1 arranged in an outer periphery of the bending part 51b2; a stage 11 that is arranged in the drawing chamber 2a and to which a sample W is mounted; a stage moving mechanism 12 that is supported by each supporting part 51b1 in the drawing chamber 2a and moves the stage 11; a two-dimensional scale 13a that is arranged on a lower surface of the stage 11; an encoder head 13b that is arranged at a lower side of the two-dimensional scale 13a and detects a position of the stage 11 by the two-dimensional scale 13a; and a supporting medium 55 that has a plurality of end parts 55b1 attached to the supporting part 51b1 and supports the encoder head 13b so as to over the bending part 51b2.SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016129165(A) |
申请公布日期 |
2016.07.14 |
申请号 |
JP20150002799 |
申请日期 |
2015.01.09 |
申请人 |
NUFLARE TECHNOLOGY INC |
发明人 |
SAITO HIROYASU;IDENO KEITA |
分类号 |
H01L21/027;H01J37/20;H01J37/305;H01L21/68 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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