| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A device region (17) is formed at a central part of a semiconductor wafer (2) and a ring-shaped reinforced portion (18) which is thicker than the device region (17) is formed on an outer circumference of the device region (17). After forming the device region (17) and the ring-shaped reinforced portion (18), the semiconductor wafer (2) is subjected to wet treatment. After the wet treatment, the semiconductor wafer (2) is rotated and dried. A center position of the semiconductor wafer (2) is different from a center position of the ring-shaped reinforced portion (18). |
| 申请公布号 |
US2016197046(A1) |
申请公布日期 |
2016.07.07 |
| 申请号 |
US201314911190 |
申请日期 |
2013.11.26 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NAKATA Kazunari |
| 分类号 |
H01L23/00;H01L21/02;H01L21/304 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device comprising:
forming a device region at a central part of a semiconductor wafer and a ring-shaped reinforced portion which is thicker than the device region on an outer circumference of the device region; after forming the device region and the ring-shaped reinforced portion, subjecting the semiconductor wafer to wet treatment; and after the wet treatment, rotating and drying the semiconductor wafer, wherein a center position of the semiconductor wafer is different from a center position of the ring-shaped reinforced portion. |
| 地址 |
Tokyo JP |
