CMOS Analog Memories Utilizing Ferroelectric Capacitors

摘要

A memory cell and memories constructed from that memory cell are disclosed. A memory according to the present invention includes a ferroelectric capacitor, a charge source and a read circuit. The charge source receives a data value to be stored in the ferroelectric capacitor. The charge source converts the data value to a remanent charge to be stored in the ferroelectric capacitor and causes that remanent charge to be stored in the ferroelectric capacitor. The read circuit determines a charge stored in the ferroelectric capacitor. The data value has more than three distinct possible states, and the determined charge has more than three determined values. The memory also includes a reset circuit that causes the ferroelectric capacitor to enter a predetermined known reference state of polarization.

主权项

1. A memory cell comprising:
a ferroelectric capacitor; and a circuit having first and second current paths connected between first and second switch terminals, said ferroelectric capacitor being connected in series in said first current path such that a current equal to a fixed fraction of a current entering said first switch terminal passes into said ferroelectric capacitor substantially independent of said current.