| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor active layer, capable of arbitrarily controlling a compositional ratio of cations, a method of manufacturing a thin film transistor using the same and a thin film transistor having the semiconductor active layer. SOLUTION: An IGZO layer is formed on a substrate by vapor-depositing ions including In, Ga, and Zn from a first target, and the compositional ratio of In of the IGZO layer is turned to be 45 to 80 atomic% by vapor-depositing the ions including In from a second target. COPYRIGHT: (C)2009,JPO&INPIT
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