SEMICONDUCTOR STRUCTURE WITH AN L-SHAPED BOTTOM PLATE

摘要

A semiconductor structure that has adjacent transistors that share a common source/drain semiconductor structure. At least one of the adjacent transistors comprising: a vertical channel and a source/drain semiconductor structure connected to the vertical channel such that the source/drain semiconductor structure has a vertical side that is substantially planar with a vertical side of the first vertical channel. The source/drain semiconductor structure extends horizontally from its vertical side farther than the first vertical channel extends from its vertical side such that a width of the source/drain is greater than a width of the first vertical channel. The first source/drain semiconductor structure is located on a layer of substrate and the vertical channel is perpendicular relative to the layer of substrate.

主权项

1. A semiconductor structure, the semiconductor structure comprising:
adjacent transistors that share a common source/drain semiconductor structure; at least one of the adjacent transistors comprising:
a first vertical channel; anda first source/drain semiconductor structure connected to the first vertical channel such that the first source/drain semiconductor structure has a vertical side that is substantially planar with a vertical side of the first vertical channel, the first source/drain semiconductor structure extending horizontally from its vertical side farther than the first vertical channel extends from its vertical side such that a width of the source/drain is greater than a width of the first vertical channel, the first source/drain semiconductor structure being located on a layer of substrate, the vertical channel being perpendicular relative to the layer of substrate.