发明名称 PATTERN FORMATION METHOD AND MOLD
摘要 PROBLEM TO BE SOLVED: To easily solve the problems of pattern chipping or the like at the time of mold releasing. SOLUTION: A mold layer 121 is formed of a self-crosslinkable plastic fluororesin, whose film thickness is about 300 nm, the mold layer 121 is pressed to a surface where a silicon pattern layer 102 is formed of a silicon substrate 101, and the state is attained wherein a fluororesin pattern layer (transfer pattern layer) 122 where the shape of the silicon pattern layer 102 is transferred (pressure-molded) is formed on the mold layer 121. After the fluororesin pattern layer 122 is formed by pressing, it is turned to a thermoset state by heating the mold layer 121 to about 200°C. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006156735(A) 申请公布日期 2006.06.15
申请号 JP20040345533 申请日期 2004.11.30
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 IKUTSU HIDEO
分类号 H01L21/027 主分类号 H01L21/027
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