| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment device which prevents generation of plasma damage. SOLUTION: An ALD device has a process tube 31 wherein a processing chamber 32 for carrying out batch treatment of a plurality of wafers 1 is formed, a gas supply tube 38 for supplying dichlorosilane gas 73 to the treatment chamber 32, a gas supply tube 50 for supplying ammonia gas 71 to the treatment chamber 32, an exhaust tube 35 for exhausting the treatment chamber 32, a pair of discharge electrodes 57, 57 for exciting plasma in the treatment chamber 32 and a plasma chamber 48 having an outlet 49 for blowing out active species 72 excited by plasma to the treatment chamber 32. In the ALD device, a detection electrode 65 is disposed in one side of the plasma chamber 48 inside the treatment chamber 32, and a high frequency current detector 66 is connected to the detection electrode 65. Since a high frequency current leaked from the plasma chamber 48 can be detected in an early stage, countermeasures to prevent plasma damage in the wafer 1 of the treatment chamber 32 can be taken. COPYRIGHT: (C)2006,JPO&NCIPI
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