发明名称 |
Multilayered substrate obtained via wafer bonding for power applications |
摘要 |
A multi-layer semiconductor device utilizes the good thermal and electrical properties of a polycrystalline substrate with the electrical properties of single crystal film transferred via wafer bonding. The device structure includes a polycrystalline, e.g., silicon carbide substrate, which was polished. A planarization layer of silicon is formed on the surface, followed by chemical mechanical polishing. The substrate is then bonded to either a bulk silicon wafer or a silicon-on-insulator (SOI) wafer. The silicon (SOI) wafer is thinned to the desired thickness.
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申请公布号 |
US2006284167(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20060326439 |
申请日期 |
2006.01.06 |
申请人 |
AUGUSTINE GODFREY;HARTMAN JEFFREY D;ELVEY ERICA C;TITTEL PAUL A |
发明人 |
AUGUSTINE GODFREY;HARTMAN JEFFREY D.;ELVEY ERICA C.;TITTEL PAUL A. |
分类号 |
H01L29/08;H01L35/24;H01L51/00 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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