| 发明名称 |
ARMATURE-CLAD MRAM DEVICE |
| 摘要 |
A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack. |
| 申请公布号 |
US2016336507(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201615222585 |
申请日期 |
2016.07.28 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION ;CROCUS TECHNOLOGY |
发明人 |
Annunziata Anthony J.;Gapihan Erwan |
| 分类号 |
H01L43/08;H01L43/02 |
主分类号 |
H01L43/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetoresistive memory cell, comprising:
a magnetoresistive tunnel junction stack; a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack; and a magnetic liner encapsulating a conductor and being gapped apart from the dielectric encapsulation layer covering the sidewall portions of the stack, the conductor being formed in the gap formed between the magnetic liner and the dielectric encapsulation layer covering the sidewall portions of the stack. |
| 地址 |
Armonk NY US |
