P-COMPENSATED AND P-DOPED SUPERLATTICE INFRARED DETECTORS

摘要

Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 μm.

主权项

1. An infrared photodetector absorber material comprising a p-doped Ga-free superlattice material having a cutoff wavelength of from 8 to 13 μm, wherein the superlattice material is sufficiently doped to compensate for residual n-type carriers.