CROSS-COUPLE IN MULTI-HEIGHT SEQUENTIAL CELLS FOR UNI-DIRECTIONAL M1

摘要

A MOS device includes first, second, third, and fourth interconnects. The first interconnect extends on a first track in a first direction. The first interconnect is configured in a metal layer. The second interconnect extends on the first track in the first direction. The second interconnect is configured in the metal layer. The third interconnect extends on a second track in the first direction. The third interconnect is configured in the metal layer. The second track is parallel to the first track. The third interconnect is coupled to the second interconnect. The second and third interconnects are configured to provide a first signal. The fourth interconnect extends on the second track in the first direction. The fourth interconnect is configured in the metal layer. The fourth interconnect is coupled to the first interconnect. The first and fourth interconnects are configured to provide a second signal different than the first signal.

主权项

1. A metal oxide semiconductor (MOS) device, comprising:
a first interconnect extending on a first track in a first direction, the first interconnect being configured in a metal layer; a second interconnect extending on the first track in the first direction, the second interconnect being configured in the metal layer; a third interconnect extending on a second track in the first direction, the third interconnect being configured in the metal layer, the second track being parallel to the first track, the third interconnect being coupled to the second interconnect, the second and third interconnects being configured to provide a first signal; and a fourth interconnect extending on the second track in the first direction, the fourth interconnect being configured in the metal layer, the fourth interconnect being coupled to the first interconnect, the first and fourth interconnects being configured to provide a second signal different than the first signal.