| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which has a low forward voltage VF and a small backward leakage current IR and high element withstand voltage by improving both the forward voltage VF and backward leakage current IR. SOLUTION: The Schottky barrier diode includes a semiconductor substrate having a semiconductor layer of a first conductivity type on a surface, a plurality of semiconductor layers of a second conductivity type as junction barriers provided at a predetermined depth from the top surface of the semiconductor layer of the first conductivity type, a guard ring consisting of a semiconductor layer formed on the top surface of the semiconductor layer of the first conductivity type annularly enclosing the semiconductor layers of the second conductivity type, and a metal layer disposed in contact with the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, depletion layers having their width determined to fill the junction barriers when a voltage is applied. COPYRIGHT: (C)2009,JPO&INPIT |
