| 摘要 |
A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.
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