| 发明名称 |
Method for manufacturing a semiconductor device utilizing an anodic oxidation |
| 摘要 |
An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, and maintaining the voltage at the predetermined value thereafter.
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| 申请公布号 |
US5595638(A) |
申请公布日期 |
1997.01.21 |
| 申请号 |
US19950401698 |
申请日期 |
1995.03.10 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KONUMA, TOSHIMITSU;SUGAWARA, AKIRA;UEHARA, YUKIKO |
| 分类号 |
C25D11/04;C25D11/02;H01L21/28;H01L21/316;H01L21/3205;H01L21/321;H01L21/336;H01L21/768;H01L23/52;H01L23/522;H01L29/78;H01L29/786;(IPC1-7):C25D5/00;C25D5/18;C25D11/00;C25D5/48 |
主分类号 |
C25D11/04 |
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