| 主权项 |
1. A solid-state imaging device comprising:
a semiconductor substrate having a first area in which a plurality of pixels are provided, a second area provided on an outer side with respect to the first area and in which a circuit that controls the plurality of pixels is provided, and a third area provided on the outer side with respect to the second area; a plurality of wiring layers provided above the semiconductor substrate in such a manner as to spread over the first area and the second area; an insulating film provided above a topmost one of the plurality of wiring layers in such a manner as to spread over the first area, the second area, and the third area, the insulating film having a first opening in the third area; and an inner-lens layer provided above the insulating film in such a manner as to spread over the first area, the second area, and the third area, the inner-lens layer having an inner lens in the first area, wherein the inner-lens layer has a second opening on the outer side with respect to the second area, the second opening being continuous with the first opening. |
