| 摘要 |
A light-emitting diode, according to one embodiment, comprises a plurality of mesas comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises: a light-emitting structure which comprises an exposure region exposed among the plurality of mesas; a first electrode which electrically connects with the first conductive semiconductor layer; a current interruption layer which is positioned on one portion of the plurality of mesas and one portion of the exposure region; a transparent electrode layer which partially covers the second conductive semiconductor layer and the current interruption layer, and is positioned on one portion of the plurality of mesas and one portion of the exposure region; and a second electrode which is positioned on the current interruption layer and the transparent electrode layer, and electrically connects with the second conductive semiconductor layer, wherein the current interruption layer may comprise a protrusion part and at least one connection part, the at least one connection part extending from one mesa among the plurality of mesas to another mesa adjacent to the one mesa, and the protrusion part protruding from the connection part and being positioned on the exposure region. |
