发明名称 |
Plasma Doping System With Charge Control |
摘要 |
A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.
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申请公布号 |
US2009104761(A1) |
申请公布日期 |
2009.04.23 |
申请号 |
US20070875062 |
申请日期 |
2007.10.19 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
JEON YONGBAE;SINGH VIKRAM;MILLER TIMOTHY;FANG ZIWEI;WALTHER STEVEN;GUPTA ATUL |
分类号 |
H01L21/26;C23C16/513 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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